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| 1 TC4421 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s Tough CMOSTM Construction High Peak Output Current .................................. 9A High Continuous Output Current ............... 2A Max Fast Rise and Fall Times: -- 30 nsec with 4,700 pF Load -- 180 nsec with 47,000 pF Load Short Internal Delays ............................ 30nsec Typ Low Output Impedance ............................ 1.4W Typ GENERAL DESCRIPTION The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation -- they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. 2 3 4 5 6 7 s s APPLICATIONS s s s s s Line Drivers for Extra-Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver PIN CONFIGURATIONS 5-Pin TO-220 8-Pin Plastic DIP/CerDIP VDD 1 8 VDD 7 OUTPUT ORDERING INFORMATION Part No. TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422EPA TC4422MJA Package 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CerDIP 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CerDIP Temperature Range 0C to +70C 0C to +70C - 40C to +85C - 55C to+125C 0C to +70C 0C to +70C - 40C to +85C - 55C to+125C INPUT 2 TC4421 TC4422 Tab is Common to VDD INPUT GND VDD GND OUTPUT NC 3 GND 4 TC4421 TC4422 6 OUTPUT 5 GND NOTE: Duplicate pins must both be connected for proper operation. NC = No connection FUNCTIONAL BLOCK DIAGRAM INVERTING V DD 300 mV OUTPUT INPUT 4.7V NONINVERTING TC4421/TC4422 Inverting/Noninverting GND EFFECTIVE INPUT C 25 pF TC4421/2-7 -1018/96 8 4-231 TELCOM SEMICONDUCTOR, INC. 9A HIGH-SPEED MOSFET DRIVERS TC4421 TC4422 ABSOLUTE MAXIMUM RATINGS* Power Dissipation, TA 70C PDIP ..................................................................730W CerDIP ............................................................800mW 5-Pin TO-220 ......................................................1.6W Power Dissipation, TA 70C 5-Pin TO-220 (With Heat Sink) .........................1.60W Derating Factors (To Ambient) PDIP ............................................................. 8mW/C CerDIP ....................................................... 6.4mW/C 5-Pin TO-220 .............................................. 12mW/C Thermal Impedance (To Case) 5-Pin TO-220 RQJ-C ..................................................... 10C/W Storage Temperature ............................ - 65C to +150C Operating Temperature (Chip) ................................ 150C Operating Temperature (Ambient) C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Lead Temperature (10 sec) ..................................... 300C Supply Voltage ............................................................20V Input Voltage .......................... (VDD + 0.3V) to (GND - 5V) Input Current (VIN > VDD) ........................................ 50 mA *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = 25C with 4.5V VDD 18V unless otherwise specified. Symbol Input VIH VIL IIN Logic 1 Input Voltage Logic 0 Input Voltage Input Current 2.4 -- - 10 1.8 1.3 -- -- 0.8 10 V V A Parameter Test Conditions Min Typ Max Unit 0V VIN VDD Output VOH VOL RO RO IPK IDC IREV High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Continuous Output Current Latch-Up Protection See Figure 1 See Figure 1 VDD = 18V, IO = 10 mA VDD = 18V, IO = 10 mA VDD = 18V 10V VDD 18V, TC = 25 (TC4421/22 CAT only) Duty Cycle 2% Withstand Reverse Current VDD - 0.025 -- -- -- -- 2 >1500 t 300 sec -- -- 1.4 0.9 9 -- 0.025 -- 1.7 -- V V A A mA -- -- Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1, CL = 10,000 pF Figure 1, CL = 10,000 pF Figure 1 Figure 1 -- -- -- -- 60 60 30 33 75 75 60 60 nsec nsec nsec nsec Power Supply IS VDD Power Supply Current Operating Input Voltage Logic 1 Input Voltage Logic 0 Input Voltage Input Current VIN = 3V VIN = 0V -- -- 4.5 2.4 -- - 10 0.2 55 -- -- -- -- 1.5 150 18 -- 0.8 10 mA A V V V A Input VIH VIL IIN 4-232 0V VIN VDD TELCOM SEMICONDUCTOR, INC. 9A HIGH-SPEED MOSFET DRIVERS TC4421 TC4422 ELECTRICAL CHARACTERISTICS (cont.): Symbol Input VIH VIL IIN Logic 1 Input Voltage Logic 0 Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Rise Time Fall Time Delay Time Delay Time Power Supply Current Operating Input Voltage 2.4 -- - 10 VDD - 0.025 -- -- -- -- -- -- -- -- -- 4.5 -- -- -- -- -- 2.4 1.8 60 60 50 65 0.45 0.06 -- -- 0.8 10 -- 0.025 3.6 2.7 120 120 80 80 3 0.2 18 V V A V V W W nsec nsec nsec nsec mA V 1 Measured over operating temperature range with 4.5V VS 18V unless otherwise specified. Parameter Test Conditions Min Typ Max Unit 2 3 4 5 0V VIN VDD See Figure 1 See Figure 1 VDD = 18V, IO = 10 mA VDD = 18V, IO = 10 mA Figure 1, CL = 10,000 pF Figure 1, CL = 10,000 pF Figure 1 Figure 1 VIN = 3V VIN = 0V Output VOH VOL RO RO tR tF tD1 tD2 Switching Time (Note 1) Power Supply IS VDD NOTE: 1. Switching times guaranteed by design. VDD = 18V 0.1 F 1 0.1 F 2 6 7 8 0.1 F +5V 90% INPUT 0V INPUT OUTPUT 6 tR 10% t D1 tF t D2 +18V 90% 90% OUTPUT C L = 10,000 pF TC4421 4 5 0V 10% 10% 7 INPUT: 100 kHz, square wave, tRISE = tFALL 10nsec Figure 1. Switching Time Test Circuit 8 4-233 TELCOM SEMICONDUCTOR, INC. 9A HIGH SPEED MOSFET DRIVERS TC4421 TC4422 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 220 200 180 180 160 Fall Time vs. Supply Voltage tRISE (nsec) 160 140 120 100 80 60 40 20 0 4 6 tFALL (nsec) 22,000 pF 140 22,000 pF 120 100 80 60 4700 pF 10,000 pF 10,000 pF 4700 pF 1000 pF 40 20 1000 pF 0 8 10 V DD 12 14 16 18 4 6 8 10 12 VDD 14 16 18 Rise TIme vs. Capacitive Load 300 5V 250 250 10V 300 Fall TIme vs. Capacitive Load 5V 10V tFALL (nsec) tRISE (nsec) 200 150 15V 100 50 0 100 200 150 15V 100 50 0 100 1000 10,000 CLOAD (pF) 100,000 1000 10,000 CLOAD (pF) 100,000 Rise and Fall Times vs. Temperature 90 80 70 60 Propagation Delay vs. Supply Voltage 50 C LOAD = 1000 pF 45 CLOAD = 10,000 pF VDD = 15V TIME (nsec) TIME (nsec) 40 t RISE 50 40 30 35 tD1 tD2 t FALL 30 -40 0 40 TA (C) 80 120 25 4 6 8 10 12 VDD 14 16 18 4-234 TELCOM SEMICONDUCTOR, INC. 9A HIGH SPEED MOSFET DRIVERS TC4421 TC4422 TYPICAL CHARACTERISTICS (Cont.) Supply Current vs. Capacitive Load (VDD = 18V) 220 200 180 160 2 MHz 180 47,000 pF 160 140 10,000 pF 22,000 pF 1 Supply Current vs. Frequency (VDD = 18V) 2 3 ISUPPLY (mA) 140 120 100 80 60 40 20 0 100 1000 10,000 CLOAD (pF) 100,000 632 kHz 200 kHz 20 kHz 1.125 MHz 63.2 kHz ISUPPLY (mA) 120 100 80 60 40 20 0 10 100 FREQUENCY (kHz) 1000 470 pF 4700 pF 0.1 F Supply Current vs. Capacitive Load, (VDD = 12) 180 160 140 180 160 140 Supply Current vs. Frequency (VDD = 12) 22,000 pF 10,000 pF 47,000 pF 4 5 ISUPPLY (mA) 100 80 60 40 20 0 2 MHz 63.2 kHz 1.125 MHz 632 kHz 200 kHz ISUPPLY (mA) 120 120 100 80 60 40 0.1 F 4700 pF 20 kHz 20 0 470 pF 100 1000 10,000 CLOAD (pF) 100,000 10 100 FREQUENCY (kHz) 1000 6 7 Supply Current vs. Capacitive Load (VDD = 6V) 100 90 80 70 200 kHz 100 120 Supply Current vs. Frequency (VDD = 6V) 47,000 pF 22,000 pF ISUPPLY (mA) 60 50 40 30 20 10 0 100 1000 10,000 CLOAD (pF) 20 kHz 2 MHz 632 kHz 63.2 kHz ISUPPLY (mA) 80 4700 pF 60 40 0.1 F 20 10,000 pF 470 pF 100,000 0 10 100 FREQUENCY (kHz) 1000 8 4-235 TELCOM SEMICONDUCTOR, INC. 9A HIGH SPEED MOSFET DRIVERS TC4421 TC4422 TYPICAL CHARACTERISTICS (Cont.) Propagation Delay vs. Input Amplitude 120 110 100 90 80 70 60 50 40 30 20 10 0 1 2 3 4 5 6 INPUT (V) 7 8 9 10 20 -60 -40 -20 0 20 40 TA (C) 60 80 100 120 50 Propagation Delay vs. Temperature VDD = 10V CLOAD = 10000V 45 40 35 tD2 30 tD1 TIME (nsec) tD2 tD1 TIME (nsec) 25 10 -6 Crossover Energy vs. Supply Voltage Quiescent Supply Current vs. Temperature 103 VDD= 18V 10 -7 IQUIESCENT (A) A*sec INPUT = 1 102 INPUT = 0 10 -8 4 6 8 10 12 V DD 14 16 18 -60 -40 -20 0 20 40 60 T (C) J 80 100 120 NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. High-State Output Resistance vs. Supply Voltage 6 5.5 5 4.5 6 5.5 5 4.5 Low-State Output Resistance vs. Supply Voltage RDS(ON) ( ) RDS(ON) ( ) 4 3.5 3 2.5 2 1.5 1 0.5 4 6 TJ = 150 C 4 3.5 3 2.5 2 1.5 1 0.5 TJ = 25C 4 6 8 10 12 14 16 18 TJ = 150C TJ = 25 C 8 10 12 14 16 18 VDD (V) VDD (V) 4-236 TELCOM SEMICONDUCTOR, INC. |
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